CORNERSTONES OF POWER ELECTRONICS (DVD)

09-11-2013 10:17

CORNERSTONES OF POWER ELECTRONICS

 

“CORNERSTONES OF POWER ELECTRONICS” is a set of implementation problems to the textbook, notes on lectures and seminars that took place at SEIFEM and in many institutes and universities where the engineering professor Emanuel Vaz has lectured on the topic of power electronics.

 

PROBLEMS OF CHAPTER 11 OF THE TEXT BOOK THAT ARE RESOLVED IN PRACTICAL LESSONS.

 

About the author:

 

Professor Emanuel Eduardo Pires Vaz was physicist at the Centre for Nuclear Physics and Electronic of the Faculty of Sciences of the University of Porto; he is author of 14 technical books already published in Portugal and one in the United States of America. He worked in large multinational companies as plant engineer and chief of maintenance and quality control for 24 years. Now, he is teaching applied mathematics to engineering and is an individual member of the New York Academy of Sciences. Professor Vaz has already published about fifty articles in technical journals in both Portugal and Brazil and is collaborating on NASA technical briefings.

 

 

CONTENTS:

  1. CORNERSTONES OF POWER ELECTRONICS.
  1. Problems of chapter 11 of the textbook which are resolved in practical lessons.

1. Problem 1.11. Heat-sink design for a diode.

  1. Problem 2.11. Heat-sink design for an IGBT- repetitive operational at high duty cycle.
  1. Problem 3.11. Heat-sinking design for power MOSFETs- repetitive operation at high peak current, low duty cycle.

 

  1. Problem 4.11. Heat-sink design for a MOSFET- repetitive operation at high duty cycle.

 

  1. Problem 5.11. Two thermal elements on a common heat sink.

 

  1. Problem 6.11. Six thermal elements in a common package.

 

9. Problem 7.11.

9. Problem 8.11.

10. Problem 9.11.

11. Problem 10.11.

12. Problem 11.11.

12. Quiz Problems (chapter 11).

13. Lecture 1. Seminar: on the control of state electricity in industry.

14. General hazards and problems.

15. Major industrial sources of static.

15. General means of control.

16. Discussion of specific control measures.

17. Materials handling problems.

20. Liquids in motion.

21. Moving belts.

21. Gas discharges.

22. Electrostatic paint and power application.

22. Combustible dusts.

23. Explosives.

24. Lecture 2. Seminar: semiconducting materials.

24. Materials development and crystal growth techniques.

25. Cyberconductors.

29. Epitaxy.

34. Process-induced defects in devices.

36. Lecture 13. Seminar at SEIFEM: Field effect transistor.

36. Theoretical introduction.

38. Settings.

38. Conventional polarization.

39. Operation.

41. Source-drain characteristic.

42. Transfer characteristic.

44. Important parameters.

46. Practical training.

46. Common source amplifier circuit: notes from the moderator.

48. Solution of the Thomas-Fermi Dirac Equation.

49. MOS Transistor theory.

49. Bohr`s Atomic Structure.

49. Review of Gravitational Motion.

53. Comparison with observation.

56. Conclusions.

56. The rules of Atomic Structure.

57. Silicon is a semiconductor material.

57. Doted silicon to form N-type semiconductor material.

59. Doped silicon to form P-type semiconductor material.

59. Current flow in N-type and P-type silicon.

60. Majority carrier and minority carrier.

60. Carriers in MOS transistors.

61. Basic steps of an N-Well  CMOS process.

61. Basic steps of N-Well CMOS process.

65. Feature charging induces pattern transfer problems.

66. Basic steps of an N-Well CMOS process, lightly doped drain (LDD).

69. Basic steps of a P-Well /Twin-Well CMOS process.

70. Preparation and chemistry.

72. Solar cells and detectors.

73. Application notes.

73. Eye protection.

73. Basic on LEDs.

74. Colour.

75. Comparison of chip techniques for wide-angle, non-diffused.

75. LEDs.

75. White light.

75. Intensity.

76. Thyristor.

76. Function.

79. Switching characteristics.

79. Silicon carbide thyristors.

79. Applications.

84. Triac.

87. Varistor.

87. Metal oxide varistor.

90. Lecture 4. Seminar. Comments on power electronics theory given in slides by prof Emanuel Vaz at SEIFEM-FEUP.

146. Lecture 5. Differential amplifiers; differentiator and integrator circuits.

150. Positive feedback.

157. Practical considerations.

157. Common-mode gain.

163. Offset voltage.

165. Bias current.

165. Drift.

174. Frequency response.

175. Input to output phase shift.

179. Operational amplifier models.

184. Schematic diagram of a model 741 op-amp.

186. Data.

186. Lecture 6. Seminar. Why is the sky blue? What makes the sunset red?

187 The atmosphere.

187. Light waves.

188. Colours of light.

189. Light in the air.

190. The back sky and white sun.

191. Why is the sunset red?

182. What is the atmosphere?

193. Layers of the atmosphere.

193. Homosphere.

193. Heterosphere.

194. Layers based on electrical properties.

194. Neutral atmosphere.

194. Ionosphere.

194. Magnetosphere.

195. Layers based on temperature.

195. Troposphere.

196. Stratosphere.

196. Thermosphere.

196. Meteors.

197. Exosphere.

197. Projects to do together.

197. Project 1. –Split light into a spectrum.

198. Project 2. - Sky in a jar.

198. Project 3. Mixing colours.

199. What is static electricity?

199. Eliminate static electricity from your television screen.

201. How do we protect vulnerable components?

202 Electric shocks in a house /office.

204. Protecting electronics.

205. Preventing explosions.

205. Gasoline explosions.

205. Dust explosions.

206. Equipment problems.

206 Summary.

207. Problems with static electricity.

208. Quantum Hall effect.

209. Applications.

209. History.

209. Integer quantum Hall effect-Landau levels.

211. Mathematics. Hofstadter’s butterfly.

212. Is there difference between the dynamic timing analysis and static timing analysis?

212. Dynamic timing static timing.

213. Regards: What is the difference between time domain and frequency domain?

213. Non linear load reactive compensation and power factor correction using modulated power filter.

215. Total harmonic distortion (THD) and power factor (PF).

216. Power quality disturbances.

217. Short duration voltage variations.

218. Sag.

219. Swell.

220. Interruption.

 

220. Long duration voltage variations.

220. Overvoltage.

221. Undervoltage.

221. Transients.

221. Impulsive transient.

222. Oscillatory transient.

224. Voltage Imbalance.

224. Waveform distortion.

225. Harmonic.

226. Interharmonics.

226. Notching.

227. Noise.

227. Voltage fluctuation.

228. Power frequency variations.

228. Reactive power problems.

229. Reactive power sources.

229. Generators.

230. Power transfer components.

231. Transformers.

232. Transmission lines and cables.

232. HVDC converters.

233. Loads.

233. Induction motors.

234. Induction generators.

234. Discharged lightning.

234. Constant energy loads.

235. Arc furnaces.

235. Reactive power compensation devices.

235. Synchronous compensators.

236. Static VAR compensators.

237. Harmonic filter.

237. Static synchronous compensator (STATCOM).

238. Series capacitors and reactors.

239. Shunt capacitors.

240. Why power factor correction.

240. Power factor correction techniques.

241. Software.

241. Digital simulation models.

242. Digital simulation models.

242. System models.

243. Case #1.

244. Case #2.

245. Case #3.

245. Case #4.

246. Case #5.

264. Harmonic balance modelled in time domain.

264. The basic concept.

266. Creating transadmittance matrix.

268. Starting values.

268. Solution algorithm.

271. Termination criteria.

271. Harmonic balance analysis.

272. Large –Signal S-Parameter Simulation.

272. A symbolic HB algorithm.

274. Autonomous harmonic balance.

274. Frequency domain harmonic analysis methods.

274. Introduction.

277. Frequency scan analysis.

279. Current source methods.

284. Harmonic power flow.

286. Conclusions.

287. Large signal frequency domain device.

287. Analysis via the harmonic balance technique.

288. Applying harmonic balance to the time-dependent semiconductor equations.

290. Nonlinear relaxation methods. Examples.

294. Combined circuit-device time domain simulation of 2.5 THz GAAS Schottky diode mixers.

294. Introduction.

294. Time domain and harmonic balance methods.

295. Device models and combined circuit-device simulation.

296. Simulations of 2.5 THz CAAS Schottky diode mixers.

296. Summary and conclusions. MOS transistor theory (slides) Table 86 up to table 93.

307. VLSI design I MOS Transistor theory. Table 94 up to table 126.

340. VLSI design CMOS transistor theory table 127 up to table 141.

356. Summer power electronic lectures by professor Emanuel Eduardo PiresVaz at SEIFEM-FEUP. 2010. Table 142 up to 148.

363. Summer school of electronics. Professor Emanuel Eduardo Pires Vaz by SEIFEM-FEUP: Two terminal MOS structure table 149 up to table 180.

395. Books already published by the same author.

395. About the author.

395. Contents.